Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms

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dc.contributor.authorVaněk Tomášcs
dc.contributor.authorKejzlar Pavelcs
dc.date.accessioned2022-01-29T18:20:31Z
dc.date.available04-36-2021en
dc.date.available2022-01-29T18:20:31Z
dc.date.issued2021cs
dc.format.extent6cs
dc.identifier.doi10.1016/j.jcrysgro.2021.126151
dc.identifier.issn0022-0248cs
dc.identifier.urihttps://dspace.tul.cz/handle/15240/162054
dc.language.isoengcs
dc.publisherElseviercs
dc.publisher.cityAmsterdamcs
dc.relation.ispartofJournal of Crystal Growthen
dc.relation.ispartofseries1cs
dc.relation.urihttps://www.sciencedirect.com/science/article/pii/S0022024821001275/pdfft?md5=9eb5fd02318a458947b9abc828ae0787&pid=1-s2.0-S0022024821001275-main.pdfcs
dc.subjectCharacterizationcs
dc.subjectGrowth modelscs
dc.subjectMOVPEcs
dc.subjectNitridescs
dc.subjectScintillatorscs
dc.titleLuminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atomscs
local.identifier.publikace8751
local.relation.issueJULcs
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