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Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms
Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms
Date
2021
Authors
Vaněk Tomáš
Kejzlar Pavel
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Description
Subject(s)
Characterization
,
Growth models
,
MOVPE
,
Nitrides
,
Scintillators
Citation
Item identifier
https://dspace.tul.cz/handle/15240/162054
https://doi.org/10.1016/j.jcrysgro.2021.126151
ISSN
0022-0248
ISBN
Collections
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