Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms

Date
2021
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Description
Subject(s)
Characterization, Growth models, MOVPE, Nitrides, Scintillators
Citation
Item identifier
https://dspace.tul.cz/handle/15240/162054
 https://doi.org/10.1016/j.jcrysgro.2021.126151
ISSN
0022-0248
ISBN
Collections