Interfacial layer formation during high-temperature deposition of Sm-Co magnetic thin films on Si (100) substrates

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dc.contributor.authorSaravanan, P.
dc.contributor.authorBoominathasellarajan, S.
dc.contributor.authorSobel, Bartlomiej
dc.contributor.authorWaclawek, Stanislaw
dc.contributor.authorVinod, Vellora Thekkae Padil
dc.contributor.authorTalapatra, A.
dc.contributor.authorMohanty, J.
dc.contributor.authorČerník, Miroslav
dc.date.accessioned2019-10-07T06:57:28Z
dc.date.available2019-10-07T06:57:28Z
dc.date.issued2019-03
dc.description.abstractThe interfacial layer that has formed during the deposition of similar to 240-nm thick Sm-Co films on the bare Si (100) substrate was investigated at different deposition temperatures, T-d,T-Sm-Co: 400, 450 and 500 degrees C with respect to structural and magnetic properties of Sm-Co films. X-ray diffraction analysis showed the crystallization of both Sm2Co17(R) and SmCo5(H) magnetic phases. Rutherford back scattering studies demonstrated that the surface-diffusion reactions between the Sm-Co layer and Si-surface not only accompanied by the quasi-layered growth of CoSi2-phase; but also led to the formation of SmCoSi2-phase. Cross-sectional transmission electron microscopy analysis revealed uneven boundary with deeply grown CoSi2-layer and Moire fringes at limited regions of Co/Si interface. Magnetic measurements showed a square hysteresis loop with maximum values of coercivity (11.6 kOe) and remanence ratio (0.99) for the films grown at 500 degrees C. Magnetic force microscopy images depicted patch-like domains with increasing phase contrast against T-d,T-Sm-Co. In addition, the changes that has occurred in the magnetization reversal processes accompanied by coercivity enhancement due to higher T-d,T-Sm-Co is discussed in the context of domain morphology and first-order reversal curves.cs
dc.format.extent12 strancs
dc.identifier.WebofScienceResearcherIDE-1079-2016 Vinod, Vellora Thekkae Padil
dc.identifier.WebofScienceResearcherIDK-2323-2016 Waclawek, Stanislaw
dc.identifier.doi10.1016/j.intermet.2018.12.007
dc.identifier.orcid0000-0002-0816-526X Vinod, Vellora Thekkae Padil
dc.identifier.orcid0000-0002-8430-8269 Waclawek, Stanislaw
dc.identifier.urihttps://dspace.tul.cz/handle/15240/153846
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0966979518308161
dc.language.isocscs
dc.publisherELSEVIER SCI LTD, THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
dc.relation.ispartofINTERMETALLICS
dc.subjectMagnetic materialscs
dc.subjectSm-Co filmscs
dc.subjectSputteringcs
dc.subjectInterdiffusioncs
dc.titleInterfacial layer formation during high-temperature deposition of Sm-Co magnetic thin films on Si (100) substratescs
local.citation.epage47
local.citation.spage36
local.identifier.publikace5752
local.relation.volume106
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