Monolayer Twisted Graphene-Based Schottky Transistor

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dc.contributor.authorPetrů Michalcs
dc.date.accessioned2022-01-29T18:22:49Z
dc.date.available09-16-2021en
dc.date.available2022-01-29T18:22:49Z
dc.date.issued2021-01-01cs
dc.format.extent11cs
dc.identifier.doidoi.org/10.3390/ma14154109
dc.identifier.issn1996-1944cs
dc.identifier.urihttps://dspace.tul.cz/handle/15240/162198
dc.language.isoengcs
dc.publisherMDPIcs
dc.publisher.cityBaselcs
dc.relation.ispartofMaterialsen
dc.relation.urihttps://www.mdpi.com/1996-1944/14/15/4109/htmcs
dc.subjectdiametercs
dc.subjectgeometry characteristiccs
dc.subjectquantum tunnelingcs
dc.subjectschottky transistorcs
dc.subjecttwisted graphenecs
dc.titleMonolayer Twisted Graphene-Based Schottky Transistorcs
local.citation.epage1-11cs
local.citation.spage1-11cs
local.identifier.publikace8895
local.relation.issue15cs
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