A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

Simple item page
dc.contributor.authorHospodková, A.
dc.contributor.authorHájek, F.
dc.contributor.authorPangrac, J.
dc.contributor.authorZikova, M. Slavicka
dc.contributor.authorHubáček, Tomáš
dc.contributor.authorKuldova, K.
dc.contributor.authorOswald, J.
dc.contributor.authorVanek, T.
dc.contributor.authorVetushka, A.
dc.contributor.authorCizek, J.
dc.contributor.authorLiedke, M. O.
dc.contributor.authorButterling, M.
dc.contributor.authorWagner, A.
dc.date.accessioned2020-04-17T15:05:01Z
dc.date.available2020-04-17T15:05:01Z
dc.date.issued2020-04-15
dc.description.abstractThis work suggests new alternative explanation why a single InGaN quantum well (QW) or the deepest QWs in the multiple quantum well (MQW) structures suffer with a high non-radiative recombination rate. According to SIMS results, positron annihilation spectroscopy and photoluminescence measurements we suggest that vacancy of Ga in complex with hydrogen atoms can play a dominant role in non-radiative Shockley-Read-Hall recombination of the deepest QWs in InGaN/GaN MQW structures. Vacancy of gallium originate dominantly in GaN buffer layers grown at higher temperatures in H-2 atmosphere and are transported to the InGaN/GaN MQW region by diffusion, where they are very effectively trapped in InGaN layers and form complex defects with hydrogen atoms during epitaxy of InGaN layers. Trapping of gallium vacancies is another suggested mechanism explaining why the widely used In containing prelayers help to increase the luminescence efficiency of the InGaN/GaN MQW active region grown above them. Understanding the mechanism why the luminescence efficiency is suppressed in deeper QWs may be very important for LED community and can help to develop new improved technologies for the growth of InGaN/GaN MQW active region.cs
dc.format.extent6 strancs
dc.identifier.doi10.1016/j.jcrysgro.2020.125579
dc.identifier.orcid0000-0003-0725-484X Hubáček, Tomáš
dc.identifier.urihttps://dspace.tul.cz/handle/15240/154742
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0022024820301020?via%3Dihub
dc.language.isocscs
dc.publisherELSEVIER, RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS
dc.relation.ispartofJOURNAL OF CRYSTAL GROWTH
dc.subjectNitridescs
dc.subjectMetalorganic vapor phase epitaxycs
dc.subjectImpuritiescs
dc.subjectDefectscs
dc.subjectQuantum wellscs
dc.titleA secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structurescs
local.article.number125579
local.relation.volume536
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
A secret luminescence killer.pdf
Size:
1.78 MB
Format:
Adobe Portable Document Format
Description:
článek
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections