Improvement of luminescence properties of GaN buffer layer for fast nitride scintillator structures

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dc.contributor.authorHubáček Tomášcs
dc.date.accessioned2018-09-25T12:10:25Z
dc.date.available2018-09-25T12:10:25Z
dc.date.issued2017-01-01cs
dc.format.extent5cs
dc.identifier.doi10.1016/j.jcrysgro.2016.12.088
dc.identifier.issn0022-0248cs
dc.identifier.urihttps://dspace.tul.cz/handle/15240/30652
dc.language.isoengcs
dc.publisherElsevier B.V.cs
dc.relation.ispartofseries0cs
dc.relation.urihttp://www.sciencedirect.com/science/article/pii/S0022024816309575cs
dc.subjectMOVPEcs
dc.subjectGaNcs
dc.subjectscintillatorscs
dc.subjectyellow bandcs
dc.titleImprovement of luminescence properties of GaN buffer layer for fast nitride scintillator structurescs
local.citation.epage221-225cs
local.citation.spage221-225cs
local.identifier.publikace4102
local.relation.issue15 April 2017cs
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