Bulk and interface second harmonic generation in the Si3N4 thin films deposited via ion beam sputtering

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dc.contributor.authorDas Nirmalcs
dc.contributor.authorKanclíř Vítcs
dc.contributor.authorMokrý Pavelcs
dc.contributor.authorŽídek Karelcs
dc.date.accessioned2022-01-29T18:19:25Z
dc.date.available08-28-2021en
dc.date.available2022-01-29T18:19:25Z
dc.date.issued2021cs
dc.format.extent6cs
dc.identifier.doi10.1088/2040-8986/abe450
dc.identifier.issn2040-8978cs
dc.identifier.urihttps://dspace.tul.cz/handle/15240/161993
dc.language.isoengcs
dc.publisherIOP PUBLISHING LTDcs
dc.relation.ispartofJournal of Optics (United Kingdom)en
dc.relation.ispartofseries1cs
dc.relation.urihttps://iopscience.iop.org/article/10.1088/2040-8986/abe450cs
dc.riv.kontrolni-cislo192273376cs
dc.riv.specifikaceRIV/46747885:24220/21:00008690!RIV21-MSM-24220___cs
dc.subjectbulkcs
dc.subjectellipsometrycs
dc.subjectinterfacecs
dc.subjectsecond harmonic generation (SHG)cs
dc.subjectsilicon nitridecs
dc.subjectthin filmscs
dc.titleBulk and interface second harmonic generation in the Si3N4 thin films deposited via ion beam sputteringen
dc.titleBulk and interface second harmonic generation in the Si3N4 thin films deposited via ion beam sputteringcs
local.identifier.publikace8690
local.relation.issue2cs
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