Improvement of luminescence properties of n-GaN using TEGa precursor

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dc.contributor.authorHubáček, Tomáš
dc.contributor.authorHospodková, Alice
dc.contributor.authorKuldová, Karla
dc.contributor.authorSlavická Zíková, Markéta
dc.contributor.authorPangrác, Jiří
dc.contributor.authorČížek, Jakub
dc.contributor.authorLiedke, Maciej Oskar
dc.contributor.authorButterling, Maik
dc.contributor.authorWagner, Andreas
dc.contributor.authorHubík, Pavel
dc.contributor.authorHulicius, Eduard
dc.date.accessioned2020-01-08T07:22:53Z
dc.date.available2020-01-08T07:22:53Z
dc.date.issued2020
dc.description.abstractThe aim of this work is to compare and improve optical and structural properties of GaN layers prepared using TMGa or TEGa precursors. MOVPE grown GaN buffer layers on sapphire substrates are usually grown from TMGa precursor at the temperatures above 1000 degrees C. These layers contain deep and shallow acceptor levels which are responsible for blue and yellow defect bands in luminescent spectra. Both defect bands are detrimental for all major nitride device applications. Especially n-doped GaN layers suffer from strong yellow defect bands. In this work, it is shown that yellow band photoluminescence intensity can be suppressed by using TEGa precursor during the growth of n-doped GaN layers. Different kinds of growth parameters, such as growth temperature or growth rate, have been studied. It is also shown that the change of carrier gas (H-2 or N-2) has very strong influence on the layer quality. H-2 carrier gas increased intensity of yellow band in sample grown from TEGa precursor while N-2 carrier gas had the same effect for sample grown from TMGa precursor. Variable energy positron annihilation spectroscopy showed creation of single V-Ga in H-2 atmosphere and clustering of V-Ga to big complexes ((V-Ga)(3)(V-N)(n)) in N-2 atmosphere.cs
dc.format.extent7 strancs
dc.identifier.doi10.1016/j.jcrysgro.2019.125383
dc.identifier.urihttps://dspace.tul.cz/handle/15240/154325
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0022024819305986
dc.language.isocscs
dc.publisherELSEVIER, RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS
dc.relation.ispartofJOURNAL OF CRYSTAL GROWTH
dc.subjectMOVPEcs
dc.subjectTEGa precursorcs
dc.subjectn-GaN;cs
dc.subjectyellow bandcs
dc.subjectV-Ga defectcs
dc.titleImprovement of luminescence properties of n-GaN using TEGa precursorcs
local.article.number125383
local.event.edate2019-08-02
local.event.locationAmer Assoc Crystal Growth, Keystone, CO
local.event.sdate2019-07-28
local.event.title19th International Conference on Crystal Growth and Epitaxy (ICCGE) held Jointly with the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE)
local.relation.volume531
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