Browsing by Author "Günter, Peter N."

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    Ferroelectric domain structures in PZN-8%PT single crystals studied by scanning force microscopy
    (Technická Univerzita v Liberci, 2001-01-01) Abplanalp, M.; Barošová, Dagmar; Bridenbaugh, P.; Erhart, Jiří; Fousek, Jan; Günter, Peter N.; Nosek, Jaroslav; Šulc, Miroslav
    Domain structures in unpoled PZN-8%PT single-crystal (001) plates have been investigated by scanning force microscopy in the piezoresponse mode, at room temperature. Regular fingerprint structure of nonferroelastic domains with antiparallel polarization (of typical width 1-2 μm) has been observed. Compared to domain patterns usually observed in other materials, domains are rather diffuse, with irregular domain walls. The latter are preferably oriented parallel to {211}- or {231}-type planes. Antiparallel polarization switching induced by local application of electric field was clearly demonstrated. Probable ferroelastic (110) domain walls have been also identified and corresponding domain structures have been analyzed. © 2001 Elsevier Science Ltd.
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    Photorefractive grating fixing in KNbO3 by ferroelectric domains
    (1997-01-01) Cudney, Richard S.; Bernasconi, Pietro N.; Zgonik, Marko; Fousek, Jan; Günter, Peter N.
    We report observations of photorefractive grating fixing in potassium niobate at room temperature by means of ferroelectric domains. A grating is recorded while the crystal is simultaneously depoled. By repoling the crystal, the presence of a latent grating is revealed. This fixed grating diffracts light with an efficiency which increases when an electric field is subsequently applied and when it is uniformly illuminated. We explain these observations qualitatively using a previously developed model that involves charge compensation by domain walls, and a new aspect that invokes the creation of new trap sites at the ferroelectric domain walls.
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    Scanning force microscopy of domain structures in Pb(Zn 1/3Nb 2/3)O 3-8% PbTiO 3 and Pb(Mg 1/3Nb 2/3)O 3-29% PbTiO 3
    (Technická Univerzita v Liberci, 2002-01-01) Abplanalp, M.; Barošová, Dagmar; Bridenbaugh, P.; Erhart, Jiří; Fousek, Jan; Günter, Peter N.; Nosek, Jaroslav; Šulc, Miroslav
    Domain structures of unpoled as well as poled (along [001]- and [110]-direction) Pb(Zn 1/3Nb 2/3)O 3 (PZN)-8% PbTiO 3 (PT) and Pb(Mg 1/3Nb 2/3)O 3 (PMN)-29% PT single crystals have been investigated by scanning force microscopy (SFM) in the piezoresponse mode, at room temperature. Antiparallel domain structures have been detected mostly in unpoled crystals of both materials, with a fingerprint pattern in (001)-oriented PZN-8% PT crystal. The ferroelastic domain wall has been identified in poled (110)-oriented PZN-8% PT crystal. "Writing" of ferroelectric domains has been performed by applying a dc voltage to the SFM tip. Local re-poling has been observed for all unpoled as well as for poled (001)-oriented crystals at the voltage ±60V. Local electrical switching was successful in poled (110)-oriented PMN-29% PT at higher voltage (±120V) but was not successful in poled (110)-oriented PZN-8% PT crystal. Domain-engineered crystals poled in [110]-direction seem to exhibit more stable (in the sense of local re-poling properties) domain arrangement. Hysteretic d(E) dependencies were observed by local application of an ac voltage. © 2002 American Institute of Physics.