Hospodková, A.; Hájek, F.; Pangrac, J.; Zikova, M. Slavicka; Hubáček, Tomáš; Kuldova, K.; Oswald, J.; Vanek, T.; Vetushka, A.; Cizek, J.; Liedke, M. O.; Butterling, M.; Wagner, A.
(ELSEVIER, RADARWEG 29, 1043 NX AMSTERDAM, NETHERLANDS, 2020-04-15)
This work suggests new alternative explanation why a single InGaN quantum well (QW) or the deepest QWs in the multiple quantum well (MQW) structures suffer with a high non-radiative recombination rate. According to SIMS ...